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Model MMBTA56WT1
Description Driver Transistor PNP Silicon
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Brand: ON Semiconductor
Packaging SC-70-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5239) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): -80.0 V

Technical parameters/rated current: -500 mA

Technical parameters/polarity: PNP

Technical parameters/dissipated power: 150 mW

Technical parameters/gain bandwidth product: 50 MHz

Technical parameters/breakdown voltage (collector emitter): 80 V

Technical parameters/maximum allowable collector current: 0.5A

Technical parameters/minimum current amplification factor (hFE): 100 @100mA, 1V

Technical parameters/rated power (Max): 150 mW

Technical parameters/operating temperature (Max): 150 ℃

Technical parameters/operating temperature (Min): 55 ℃

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: SC-70-3

External dimensions/length: 2.1 mm

External dimensions/width: 1.24 mm

External dimensions/height: 0.85 mm

External dimensions/packaging: SC-70-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Contains Lead

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MMBTA56WT1G MMBTA56WT1G ON Semiconductor 类似代替 SC-70-3
ON SEMICONDUCTOR MMBTA56WT1G Bipolar (BJT) Single Transistor, AEC-Q101, PNP, -80 V, 50 MHz, 150 mW, -500 mA, 100 hFE 新
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