Technical parameters/minimum current amplification factor (hFE): 35
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1.1 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT2222ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMBT2222ALT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 600 mA, 300 hFE
|
||
SMBT2222AE6327HTSA1
|
Infineon | 功能相似 | SOT-23-3 |
低集电极 - 发射极饱和电压 Low collector-emitter saturation voltage
|
||
SST2222AT116
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
ROHM SST2222AT116 单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 150 mA, 100 hFE
|
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