Technical parameters/rated voltage (DC): 25.0 V
Technical parameters/rated current: 10.0 mA
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 200 mW
Technical parameters/input capacitance: 5.00 pF
Technical parameters/drain source voltage (Vds): 25.0 V
Technical parameters/breakdown voltage of gate source: 25.0 V
Technical parameters/breakdown voltage: 25 V
Technical parameters/Input capacitance (Ciss): 5pF @15V(Vds)
Technical parameters/rated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBF5484LT1
|
ON Semiconductor | 功能相似 | SOT-23-3 |
JFET Transistor
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review