Technical parameters/frequency: 300 MHz
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 35 @0.1mA, 1V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 1.7 mm
External dimensions/width: 0.98 mm
External dimensions/height: 0.78 mm
External dimensions/packaging: SOT-23-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMBT2222,215
|
Nexperia | 功能相似 | SOT-23-3 |
Nexperia PMBT2222,215 , NPN 晶体管, 600 mA, Vce=30 V, HFE:30, 250 MHz, 3引脚 SOT-23封装
|
||
SMBT2222A
|
Infineon | 功能相似 | SOT-23 |
NPN 晶体管,Infineon ### 双极晶体管,Infineon
|
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