Technical parameters/rated voltage (DC): 7.00 V
Technical parameters/rated current: 80.0 mA
Technical parameters/capacitors: 1.00 pF
Technical parameters/halogen-free state: Halogen Free
Technical parameters/forward voltage: 0.6 V
Technical parameters/dissipated power: 225 mW
Technical parameters/reverse recovery time: 5 ns
Technical parameters/forward current: 10 mA
Technical parameters/Maximum forward surge current (Ifsm): 600 mA
Technical parameters/forward voltage (Max): 600 mV
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 225 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBD101LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBD101LT1G 小信号肖特基二极管, AEC-Q101, 单, 7 V, 10 mA, 600 mV, 150 °C 新
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||
|
|
Leshan Radio | 类似代替 |
双热载流子二极管混频器 Dual Hot Carrier Mixer Diodes
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|||
MMBD353LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
双热载流子二极管混频器 Dual Hot Carrier Mixer Diodes
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||
MMBD452LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
双热载流子二极管肖特基势垒二极管 Dual Hot−Carrier Diodes Schottky Barrier Diodes
|
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