Technical parameters/forward voltage: 1.1 V
Technical parameters/reverse recovery time: 4 ns
Technical parameters/Maximum reverse voltage (Vrrm): 80V
Technical parameters/maximum reverse leakage current (Ir): 0.1uA
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Other/Minimum Packaging: 3000
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBD6050LT1
|
ON Semiconductor | 类似代替 | SOT-23-3 |
开关二极管 Switching Diode
|
||
MMBD6050LT1
|
Leshan Radio | 类似代替 | SOT-23 |
开关二极管 Switching Diode
|
||
MMBD6050LT1G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
ON SEMICONDUCTOR MMBD6050LT1G. 小信号二极管
|
||
MMBD6050LT3G
|
ON Semiconductor | 类似代替 | SOT-23-3 |
开关二极管 Switching Diode
|
||
PMBD6050,215
|
Nexperia | 功能相似 | SOT-23-3 |
NXP PMBD6050,215 二极管 小信号, 单, 85 V, 215 mA, 1.25 V, 4 ns, 4 A
|
||
PMBD6050,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBD6050,215 二极管 小信号, 单, 85 V, 215 mA, 1.25 V, 4 ns, 4 A
|
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