Technical parameters/rated power: 66 W
Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 0.25 Ω
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 92 W
Technical parameters/threshold voltage: 3 V
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 13A
Technical parameters/rise time: 6.4 ns
Technical parameters/Input capacitance (Ciss): 773pF @100V(Vds)
Technical parameters/descent time: 7.6 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 92W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3-1
External dimensions/length: 10.36 mm
External dimensions/width: 15.95 mm
External dimensions/height: 4.57 mm
External dimensions/packaging: TO-220-3-1
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPP50R299CPXKSA1
|
Infineon | 功能相似 | TO-220-3 |
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.27 ohm, 10 V, 3 V
|
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