Technical parameters/drain source resistance: 45 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: -
Technical parameters/drain source voltage (Vds): 600 V
Technical parameters/leakage source breakdown voltage: 600 V
Technical parameters/Continuous drain current (Ids): 50A
Technical parameters/Input capacitance (Ciss): 6800pF @100V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 9
Encapsulation parameters/Encapsulation: ISOPLUS-SMPD-9
External dimensions/length: 25 mm
External dimensions/width: 23 mm
External dimensions/height: 5.5 mm
External dimensions/packaging: ISOPLUS-SMPD-9
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tray
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IXKR47N60C5
|
IXYS Semiconductor | 类似代替 | TO-247-3 |
IXKR 系列 单 N 沟道 600 V 45 mOhm 功率 MOSFET - ISOPLUS247
|
||
MKE38RK600DFELB
|
IXYS Semiconductor | 类似代替 | ISOPLUS-SMPD-9 |
N 通道功率 MOSFET,IXYS CoolMOS™ ### MOSFET 晶体管,IXYS IXYS 的一系列高级离散电源 MOSFET 设备
|
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