Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 3000mA
Technical parameters/minimum current amplification factor (hFE): 50
Technical parameters/Maximum current amplification factor (hFE): 250
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126
External dimensions/packaging: TO-126
Other/Minimum Packaging: 60
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE170
|
Mospec | 功能相似 |
Trans GP BJT PNP 40V 3A 3Pin TO-126 Box
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Motorola | 功能相似 |
Trans GP BJT PNP 40V 3A 3Pin TO-126 Box
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Inchange Semiconductor | 功能相似 |
Trans GP BJT PNP 40V 3A 3Pin TO-126 Box
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CJ | 功能相似 | TO-126 |
Trans GP BJT PNP 40V 3A 3Pin TO-126 Box
|
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MJE170STU
|
ON Semiconductor | 功能相似 | TO-126-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Epitaxial Sil
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