Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -10.0 A
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 3000 @3A, 4V
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.63 mm
External dimensions/width: 4.9 mm
External dimensions/height: 9.24 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJF6668
|
ON Semiconductor | 类似代替 | TO-220-3 |
互补颖电DARLINGTONS 10安培100伏, 40瓦 COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS, 40 WATTS
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review