Technical parameters/rated voltage (DC): -60.0 V
Technical parameters/rated current: -4.00 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/output voltage: 60 V
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 4A
Technical parameters/minimum current amplification factor (hFE): 750 @1.5A, 3V
Technical parameters/rated power (Max): 40 W
Technical parameters/DC current gain (hFE): 750
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40000 mW
Technical parameters/input voltage: 5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-225-3
External dimensions/length: 7.8 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.1 mm
External dimensions/packaging: TO-225-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Other/Manufacturing Applications: Power Management, Industrial
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2016/06/20
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BD678G
|
ON Semiconductor | 完全替代 | TO-126-3 |
塑料中功率硅PNP达林顿 Plastic Medium−Power Silicon PNP Darlingtons
|
||
|
|
Central Semiconductor | 类似代替 |
4.0安培达林顿功率晶体管互补硅40瓦50瓦 4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT
|
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