Technical parameters/dissipated power: 40 W
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 750 @1.5A, 3V
Technical parameters/rated power (Max): 40 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 40 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/length: 8 mm
External dimensions/width: 3.25 mm
External dimensions/height: 11 mm
External dimensions/packaging: TO-126-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards:
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSE800STSSTU
|
Fairchild | 类似代替 | TO-126-3 |
Trans Darlington NPN 60V 4A 3Pin(3+Tab) TO-126 Rail
|
||
KSE800STU
|
Fairchild | 类似代替 | TO-126-3 |
达林顿晶体管 NPN Epitaxial Sil Darl
|
||
MJE800G
|
ON Semiconductor | 功能相似 | TO-225-3 |
ON SEMICONDUCTOR MJE800G 单晶体管 双极, NPN, 60 V, 40 W, 4 A, 100 hFE 新
|
||
MJE800STU
|
ON Semiconductor | 类似代替 | TO-126-3 |
ON Semiconductor MJE800STU NPN 达林顿晶体管对, 4 A, Vce=60 V, HFE=750, 3引脚 TO-126封装
|
||
MJE800STU
|
Fairchild | 类似代替 | TO-126-3 |
ON Semiconductor MJE800STU NPN 达林顿晶体管对, 4 A, Vce=60 V, HFE=750, 3引脚 TO-126封装
|
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