Technical parameters/rated voltage (DC): -400 V
Technical parameters/rated current: -8.00 A
Technical parameters/breakdown voltage (collector emitter): 400 V
Technical parameters/minimum current amplification factor (hFE): 5 @5A, 5V
Technical parameters/rated power (Max): 80 W
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JE-5
|
Honeywell | 功能相似 |
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
|
|||
JE-5
|
Fairchild | 功能相似 | TO-126 |
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
|
||
MJE5852
|
ST Microelectronics | 类似代替 | TO-220-3 |
PNP硅功率晶体管 PNP SILICON POWER TRANSISTORS
|
||
MJE5852G
|
ON Semiconductor | 类似代替 | TO-220-3 |
ON SEMICONDUCTOR MJE5852G 单晶体管 双极, PNP, 400 V, 80 W, 8 A, 15 hFE
|
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