Technical parameters/frequency: 85 MHz
Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 8.00 A
Technical parameters/halogen-free state: Halogen Free
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 1.75 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 8A
Technical parameters/minimum current amplification factor (hFE): 40 @4A, 1V
Technical parameters/rated power (Max): 1.75 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1750 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD44H11T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD44H11T4G 单晶体管 双极, NPN, 80 V, 85 MHz, 20 W, 8 A, 40 hFE 新
|
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