Technical parameters/rated voltage (DC): 60.0 V
Technical parameters/rated current: 3.00 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/gain bandwidth product: 50 MHz
Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 50
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 12.5 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-225-3
External dimensions/length: 7.74 mm
External dimensions/width: 2.66 mm
External dimensions/height: 11.04 mm
External dimensions/packaging: TO-225-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE181
|
Fairchild | 功能相似 | 3 |
Power Bipolar Transistor,
|
||
MJE181
|
ON Semiconductor | 功能相似 | TO-225-3 |
Power Bipolar Transistor,
|
||
MJE181G
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR MJE181G. 射频双极晶体管
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review