Technical parameters/rated voltage (DC): -80.0 V
Technical parameters/rated current: -3.00 A
Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 50 @100mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/rated power (Max): 1.5 W
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-126-3
External dimensions/packaging: TO-126-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Other/Minimum Packaging: 500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJE172
|
Motorola | 功能相似 |
MULTICOMP MJE172 单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -3 A, 50 hFE
|
|||
MJE172
|
ST Microelectronics | 功能相似 | TO-126-3 |
MULTICOMP MJE172 单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -3 A, 50 hFE
|
||
|
|
CJ | 功能相似 | TO-126 |
MULTICOMP MJE172 单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -3 A, 50 hFE
|
||
|
|
ON Semiconductor | 功能相似 | TO-126-3 |
MULTICOMP MJE172 单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -3 A, 50 hFE
|
||
MJE172G
|
ON Semiconductor | 功能相似 | TO-126-3 |
ON SEMICONDUCTOR MJE172G 单晶体管 双极, PNP, -80 V, 50 MHz, 1.5 W, -3 A, 12 hFE 新
|
||
MJE172STU
|
Fairchild | 完全替代 | TO-126-3 |
ON Semiconductor MJE172STU , PNP 晶体管, 3 A, Vce=80 V, HFE:12, 0.1 MHz, 3引脚 TO-126封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review