Technical parameters/rated voltage (DC): -300 V
Technical parameters/rated current: -500 mA
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.56 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 30
Technical parameters/Maximum current amplification factor (hFE): 240
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 1560 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.73 mm
External dimensions/width: 6.22 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: TO-252-3
Physical parameters/materials: Silicon
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 2500
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD350G
|
ON Semiconductor | 类似代替 | TO-252-3 |
ON SEMICONDUCTOR MJD350G 双极晶体管
|
||
MJD350TF
|
Fairchild | 功能相似 | TO-252-3 |
PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
MJD350TF
|
Freescale | 功能相似 |
PNP 晶体管，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review