Technical parameters/rated voltage (DC): 80.0 V
Technical parameters/rated current: 10.0 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.75 W
Technical parameters/breakdown voltage (collector emitter): 80.0 V
Technical parameters/maximum allowable collector current: 10A
Technical parameters/minimum current amplification factor (hFE): 1000
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 功能相似 |
NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20W
|
|||
MJD44E3T4
|
ON Semiconductor | 功能相似 | TO-252-3 |
NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20W
|
||
MJD44E3T4G
|
ON Semiconductor | 类似代替 | TO-252-3 |
达林顿功率晶体管DPAK对于表面贴装应用10安培80伏, 20瓦 Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS
|
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