Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.56 W
Technical parameters/breakdown voltage (collector emitter): 300 V
Technical parameters/maximum allowable collector current: 0.5A
Technical parameters/minimum current amplification factor (hFE): 30 @50mA, 10V
Technical parameters/rated power (Max): 15 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1560 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJD350G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD350G 双极晶体管
|
||
MJD350TF
|
Fairchild | 功能相似 | TO-252-3 |
ON Semiconductor MJD350TF , PNP 晶体管, 500 mA, Vce=300 V, HFE:30, 3引脚 DPAK (TO-252)封装
|
||
MJD350TF
|
Freescale | 功能相似 |
ON Semiconductor MJD350TF , PNP 晶体管, 500 mA, Vce=300 V, HFE:30, 3引脚 DPAK (TO-252)封装
|
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