Technical parameters/rated voltage (DC): -100 V
Technical parameters/rated current: -2.00 A
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 20 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/minimum current amplification factor (hFE): 1000 @2A, 3V
Technical parameters/rated power (Max): 20 W
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/gain bandwidth: 25MHz (Min)
Technical parameters/dissipated power (Max): 20000 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/length: 6.6 mm
External dimensions/width: 6.2 mm
External dimensions/height: 2.4 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, Power Management, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSH117TM
|
Freescale | 完全替代 |
Trans Darlington PNP 100V 2A 3Pin(2+Tab) DPAK T/R
|
|||
MJD117G
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON SEMICONDUCTOR MJD117G 单晶体管 双极, 达林顿, PNP, 100 V, 25 MHz, 1.75 W, 2 A, 12 hFE
|
||
MJD117RLG
|
ON Semiconductor | 完全替代 | TO-252-3 |
DPAK PNP 100V 2A
|
||
MJD117TF
|
ON Semiconductor | 功能相似 | TO-252-3 |
FAIRCHILD SEMICONDUCTOR MJD117TF 双极性晶体管, PNP, -100V
|
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