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Model MJD2955T4
Description Complementary Power Transistors DPAK for Surface Mount Applications
Product QR code
Brand: ON Semiconductor
Packaging TO-252-3
Delivery time
Packaging method
Standard packaging quantity 1
1.19  yuan 1.19yuan
5+:
$ 1.6065
25+:
$ 1.4875
50+:
$ 1.4042
100+:
$ 1.3685
500+:
$ 1.3447
2500+:
$ 1.3150
5000+:
$ 1.3031
10000+:
$ 1.2852
Quantity
5+
25+
50+
100+
500+
Price
$1.6065
$1.4875
$1.4042
$1.3685
$1.3447
Price $ 1.6065 $ 1.4875 $ 1.4042 $ 1.3685 $ 1.3447
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4483) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): -60.0 V

Technical parameters/rated current: -10.0 A

Technical parameters/breakdown voltage (collector emitter): 60 V

Technical parameters/minimum current amplification factor (hFE): 20 @4A, 4V

Technical parameters/rated power (Max): 1.75 W

Encapsulation parameters/installation method: Surface Mount

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)

Other/Product Lifecycle: Unknown

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

Customs information/ECCN code: EAR99

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MJD2955G MJD2955G ON Semiconductor 功能相似 TO-252-3
MJD 系列 60 V 10 A PNP 互补 功率晶体管 - TO-252-3
PDF
MJD2955T4G MJD2955T4G ON Semiconductor 功能相似 TO-252-3
ON SEMICONDUCTOR MJD2955T4G Bipolar (BJT) Single Transistor, PNP, -60 V, 2 MHz, 1.75 W, -10 A, 5 hFE 新

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