Technical parameters/rated voltage (DC): 100 V
Technical parameters/rated current: 6.00 A
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 65 W
Technical parameters/breakdown voltage (collector emitter): 100 V
Technical parameters/maximum allowable collector current: 6A
Technical parameters/minimum current amplification factor (hFE): 15 @3A, 4V
Technical parameters/Maximum current amplification factor (hFE): 75
Technical parameters/rated power (Max): 2 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.29 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tube
Other/Minimum Packaging: 800
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MJB41CG
|
ON Semiconductor | 完全替代 | TO-263-3 |
ON SEMICONDUCTOR MJB41CG 功率晶体管, NPN, 100V, D2-PAK
|
||
MJB41CT4G
|
ON Semiconductor | 类似代替 | TO-263-3 |
ON SEMICONDUCTOR MJB41CT4G. 功率晶体管, NPN, 100V, D2-PAK
|
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