Technical parameters/power supply voltage (DC): 4.50V (min)
Technical parameters/rise/fall time: 12ns, 15ns
Technical parameters/number of output interfaces: 2
Technical parameters/dissipated power: 669 mw
Technical parameters/descent time (Max): 35 ns
Technical parameters/rise time (Max): 30 ns
Technical parameters/operating temperature (Max): 125 ℃
Technical parameters/operating temperature (Min): -40 ℃
Technical parameters/dissipated power (Max): 669 mW
Technical parameters/power supply voltage: 4.5V ~ 18V
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -40℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MCP14E6T-E/SN
|
Microchip | 完全替代 | SOIC-8 |
2.0 A 双 高速 功率 MOSFET 驱动器 带使能 采用8-SOIC 150 mil 封装
|
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