Technical parameters/dissipated power: 0.8 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 128pF @10V(Vds)
Technical parameters/rated power (Max): 800 mW
Technical parameters/descent time: 12 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 800 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SMD-6
External dimensions/packaging: SMD-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Sanyo Semiconductor | 完全替代 |
双 N 通道 MOSFET,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
|
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