Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 1.5 W
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/rise time: 26 ns
Technical parameters/Input capacitance (Ciss): 410pF @10V(Vds)
Technical parameters/descent time: 32 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2 mm
External dimensions/width: 1.6 mm
External dimensions/height: 0.85 mm
External dimensions/packaging: SOT-363-6
Physical parameters/materials: Silicon
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
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Sanyo Semiconductor | 类似代替 |
P 通道功率 MOSFET,12V,ON Semiconductor ### MOSFET 晶体管,ON Semiconductor
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