Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 21 mΩ
Technical parameters/dissipated power: 65 W
Technical parameters/drain source voltage (Vds): 25 V
Technical parameters/leakage source breakdown voltage: 25 V
Technical parameters/rise time: 60 ns
Technical parameters/Input capacitance (Ciss): 700pF @25V(Vds)
Technical parameters/rated power (Max): 65 W
Technical parameters/descent time: 40 ns
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 65W (Tc)
Encapsulation parameters/installation method: Through Hole
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/length: 10.3 mm
External dimensions/width: 4.7 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Rail
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
NXP | 功能相似 | TO-220 |
TrenchMOS(TM) logic level FET
|
||
PHP45N03LTA
|
Philips | 功能相似 |
TrenchMOS(TM) logic level FET
|
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