Technical parameters/frequency: 100 MHz
Technical parameters/number of pins: 6
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 300 mW
Technical parameters/breakdown voltage (collector emitter): 45 V
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 300 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SC-70-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SC-70-6
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Audio, Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC857BS,115
|
NXP | 功能相似 | TSSOP-6 |
NXP BC857BS,115 双极晶体管阵列, 双PNP, -45 V, 200 mW, -100 mA, 200 hFE, SOT-363
|
||
BC857BS,115
|
Nexperia | 功能相似 | SC-70-6 |
NXP BC857BS,115 双极晶体管阵列, 双PNP, -45 V, 200 mW, -100 mA, 200 hFE, SOT-363
|
||
BC857BS-7-F
|
Diodes | 功能相似 | SOT-363-6 |
三极管
|
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