Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 31W (Tc)
Technical parameters/drain source voltage (Vds): 560 V
Technical parameters/Continuous drain current (Ids): 4.5A
Technical parameters/rise time: 5 ns
Technical parameters/Input capacitance (Ciss): 470pF @25V(Vds)
Technical parameters/descent time: 10 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 31W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IPA50R950CE
|
Infineon | 类似代替 | TO-220-3 |
500V,4.3A,950mOhm,N沟道功率MOSFET
|
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