Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 83W (Tc)
Technical parameters/drain source voltage (Vds): 650 V
Technical parameters/Continuous drain current (Ids): 6.6A
Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 790pF @25V(Vds)
Technical parameters/descent time: 9 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 83W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3-1
External dimensions/packaging: TO-220-3-1
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
RF1S9630SM
|
Intersil | 功能相似 |
6.5A , 200V , 0.800欧姆,P沟道功率MOSFET 6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs
|
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