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Model IPB04N03LB G
Description MOSFET N-CH 30V 80A D2PAK
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Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4048) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): 25.0 V

Technical parameters/rated current: 80.0 A

Technical parameters/dissipated power: 107W (Tc)

Technical parameters/input capacitance: 3.88 nF

Technical parameters/gate charge: 32.0 nC

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Continuous drain current (Ids): 80.0 A

Technical parameters/Input capacitance (Ciss): 5203pF @15V(Vds)

Technical parameters/dissipated power (Max): 107W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IPB042N03L G IPB042N03L G Infineon 类似代替 TO-263-3
INFINEON IPB042N03L G 晶体管, MOSFET, N沟道, 70 A, 30 V, 3.5 mohm, 10 V, 1 V
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