Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 32.0 A
Technical parameters/number of channels: 1
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 89.0 W
Technical parameters/product series: IRF6611
Technical parameters/input capacitance: 4.86 nF
Technical parameters/gate charge: 56.0 nC
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/Continuous drain current (Ids): 22.0 A
Technical parameters/Input capacitance (Ciss): 4860pF @15V(Vds)
Technical parameters/rated power (Max): 3.9 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 7
Encapsulation parameters/Encapsulation: DirectFET-4
External dimensions/packaging: DirectFET-4
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual |
|---|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review