Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 1W (Ta)
Technical parameters/drain source voltage (Vds): 55 V
Technical parameters/Continuous drain current (Ids): 4A
Technical parameters/rise time: 13.4 ns
Technical parameters/Input capacitance (Ciss): 400pF @25V(Vds)
Technical parameters/descent time: 17.7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1W (Ta)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/packaging: TO-261-4
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFL024N
|
Infineon | 类似代替 | TO-261-4 |
SOT-223 N-CH 55V 4A
|
||
IRFL024N
|
International Rectifier | 类似代替 | SOT-223 |
SOT-223 N-CH 55V 4A
|
||
IRFL024NPBF
|
International Rectifier | 功能相似 | SOT-223-4 |
INFINEON IRFL024NPBF 晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V
|
||
IRFL024NPBF
|
Infineon | 功能相似 | TO-261-4 |
INFINEON IRFL024NPBF 晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V
|
||
|
|
IFC | 功能相似 |
INFINEON IRFL024NTRPBF 晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
|
|||
IRFL024NTRPBF
|
International Rectifier | 功能相似 | TO-261-4 |
INFINEON IRFL024NTRPBF 晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
|
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