Technical parameters/rated voltage (DC): 20.0 V
Technical parameters/rated current: 93.0 A
Technical parameters/drain source resistance: 4.50 MΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 79W (Tc)
Technical parameters/product series: IRFR3711Z
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/leakage source breakdown voltage: 20.0V (min)
Technical parameters/Continuous drain current (Ids): 93.0 A
Technical parameters/rise time: 13 ns
Technical parameters/Input capacitance (Ciss): 2160pF @10V(Vds)
Technical parameters/descent time: 5.2 ns
Technical parameters/dissipated power (Max): 79W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFR3711ZTRPBF
|
International Rectifier | 类似代替 | TO-252-3 |
晶体管, MOSFET, N沟道, 93 A, 20 V, 0.0045 ohm, 10 V, 2 V
|
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