Technical parameters/rated current: 429 mA
Technical parameters/tolerances: ±10 %
Technical parameters/inductance: 1.20 µH
Technical parameters/self harmonic frequency: 120 MHz
Technical parameters/Q value: 30.0
Technical parameters/testing frequency: 7.96 MHz
Technical parameters/Resistance (DC): ≤380 mΩ
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation (metric): 4532
Encapsulation parameters/Encapsulation: 1812
External dimensions/length: 4.5 mm
External dimensions/width: 3.2 mm
Dimensions/Packaging (Metric): 4532
External dimensions/packaging: 1812
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ISC1812EB1R2K
|
Vishay Dale | 完全替代 | 1812 |
Ind Chip Shielded/Molded Wirewound 1.2uH 10% 7.96MHz 30Q-Factor Powdered Iron 429mA 1812 Bulk
|
||
ISC1812EB1R2K
|
Vishay Semiconductor | 完全替代 |
Ind Chip Shielded/Molded Wirewound 1.2uH 10% 7.96MHz 30Q-Factor Powdered Iron 429mA 1812 Bulk
|
|||
ISC1812EB1R2K
|
VISHAY | 完全替代 | 1812 |
Ind Chip Shielded/Molded Wirewound 1.2uH 10% 7.96MHz 30Q-Factor Powdered Iron 429mA 1812 Bulk
|
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