Technical parameters/dissipated power: 900 mW
Technical parameters/leakage source breakdown voltage: 9 V
Technical parameters/breakdown voltage of gate source: 6 V
Technical parameters/output power: 23.5 dBm
Technical parameters/gain: 14.5 dB
Technical parameters/operating temperature (Max): 150 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: MW-6
External dimensions/packaging: MW-6
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CLY2
|
TriQuint | 功能相似 |
Trans JFET 9V 600mA 6Pin MW T/R
|
|||
CLY2
|
Qorvo | 功能相似 | MW-6 |
Trans JFET 9V 600mA 6Pin MW T/R
|
||
CLY2
|
Siemens Semiconductor | 功能相似 |
Trans JFET 9V 600mA 6Pin MW T/R
|
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