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Model IRLZ24N
Description Trans MOSFET N-CH 55V 18A 3Pin(3+Tab) TO-220AB
Product QR code
Brand: International Rectifier
Packaging TO-220
Delivery time
Packaging method Bulk
Standard packaging quantity 1
1.72  yuan 1.72yuan
5+:
$ 2.3207
25+:
$ 2.1488
50+:
$ 2.0284
100+:
$ 1.9769
500+:
$ 1.9425
2500+:
$ 1.8995
5000+:
$ 1.8823
10000+:
$ 1.8565
Quantity
5+
25+
50+
100+
500+
Price
$2.3207
$2.1488
$2.0284
$1.9769
$1.9425
Price $ 2.3207 $ 2.1488 $ 2.0284 $ 1.9769 $ 1.9425
Start batch production 5+ 25+ 50+ 100+ 500+
Check the distribution price
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6155) Minimum order quantity(5)
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Technical parameters/rated voltage (DC): 55.0 V

Technical parameters/rated current: 18.0 A

Technical parameters/drain source resistance: 60 mΩ

Technical parameters/polarity: N-Channel

Technical parameters/dissipated power: 45 W

Technical parameters/product series: IRLZ24N

Technical parameters/drain source voltage (Vds): 55 V

Technical parameters/leakage source breakdown voltage: 55.0V (min)

Technical parameters/Continuous drain current (Ids): 18.0 A

Technical parameters/rise time: 74.0 ns

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Package parameters/number of pins: 3

Encapsulation parameters/Encapsulation: TO-220

External dimensions/packaging: TO-220

Physical parameters/operating temperature: -55℃ ~ 175℃

Other/Product Lifecycle: Active

Other/Packaging Methods: Bulk

Compliant with standards/RoHS standards: Non-Compliant

Compliant with standards/lead standards: Contains Lead

Compliant with standard/REACH SVHC version: 2014/12/17

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STP16NF06L STP16NF06L ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP16NF06L.. 场效应管, MOSFET, N沟道, 60V, 16A, TO-220
PDF
STP20NF06L STP20NF06L ST Microelectronics 功能相似 TO-220-3
STMICROELECTRONICS STP20NF06L 晶体管, MOSFET, N沟道, 10 A, 60 V, 60 mohm, 10 V, 3 V
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