Technical parameters/power supply voltage (DC): 3.30 V, 3.60 V (max)
Technical parameters/clock frequency: 70.0 GHz
Technical parameters/access time: 70.0 ns
Technical parameters/memory capacity: 8000000 B
Technical parameters/operating temperature (Max): 85 ℃
Technical parameters/operating temperature (Min): -40 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 48
Encapsulation parameters/Encapsulation: TFBGA-48
External dimensions/packaging: TFBGA-48
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
M29W800DB70ZE6
|
Micron | 功能相似 | BGA |
NOR闪存 STD FLASH
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M29W800DB70ZE6
|
ST Microelectronics | 功能相似 | TFBGA-48 |
NOR闪存 STD FLASH
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Numonyx | 功能相似 | TFBGA-48 |
8兆位(1MB X8或X16 512KB ,引导块) 3V供应闪存 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
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ST Microelectronics | 功能相似 | TFBGA-48 |
8兆位(1MB X8或X16 512KB ,引导块) 3V供应闪存 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
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