Technical parameters/number of pins: 3
Technical parameters/drain source resistance: 200 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 43 W
Technical parameters/threshold voltage: 4 V
Technical parameters/drain source voltage (Vds): 60 V
Technical parameters/Continuous drain current (Ids): 10.0 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/dissipated power (Max): 43W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFZ10
|
International Rectifier | 类似代替 | Through Hole |
MOSFET N-CH 60V 10A TO-220AB
|
||
IRFZ10
|
Vishay Siliconix | 类似代替 | TO-220-3 |
MOSFET N-CH 60V 10A TO-220AB
|
||
IRFZ10
|
Vishay Semiconductor | 类似代替 | TO-220-3 |
MOSFET N-CH 60V 10A TO-220AB
|
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