Technical parameters/breakdown voltage (collector emitter): 6 V
Technical parameters/gain: 8.5 dB
Technical parameters/minimum current amplification factor (hFE): 75 @10mA, 3V
Technical parameters/rated power (Max): 150 mW
Encapsulation parameters/Encapsulation: Mini 3P
External dimensions/packaging: Mini 3P
Other/Packaging Methods: Cut Tape (CT)
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2SC5010
|
Renesas Electronics | 功能相似 |
NPN硅外延晶体管3引脚超超MINI模具 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
|
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|
|
Silicon Strorage Technology | 完全替代 | SOT-343 |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold
|
||
|
|
Renesas Electronics | 完全替代 | Surface Mount |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold
|
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NE68519-T1
|
California Eastern Laboratories | 类似代替 | SOT-523 |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold T/R
|
||
|
|
NEC | 类似代替 | Surface Mount |
Trans RF BJT NPN 6V 0.03A 3Pin Ultra Super Mini-Mold T/R
|
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