Technical parameters/polarity: PNP
Technical parameters/breakdown voltage (collector emitter): 30 V
Technical parameters/maximum allowable collector current: 3A
Technical parameters/minimum current amplification factor (hFE): 175 @1A, 2V
Technical parameters/rated power (Max): 550 mW
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SOT-89-3
External dimensions/packaging: SOT-89-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PBSS5330X,115
|
Nexperia | 类似代替 | SOT-89-3 |
PBSS5330X 系列 30 V 3 A 表面贴装 PNP 低 VCEsat (BISS) 晶体管 - SOT-89-3
|
||
PBSS5330X,115
|
NXP | 类似代替 | SOT-89-3 |
PBSS5330X 系列 30 V 3 A 表面贴装 PNP 低 VCEsat (BISS) 晶体管 - SOT-89-3
|
||
PBSS5330X,135
|
Nexperia | 类似代替 | SOT-89-3 |
SOT-89 PNP 30V 3A
|
||
PBSS5330X,135
|
NXP | 类似代替 | SOT-89-3 |
SOT-89 PNP 30V 3A
|
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