Technical parameters/polarity: NPN
Technical parameters/dissipated power: 250 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 200 @1mA, 5V
Technical parameters/rated power (Max): 250 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 250 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-883-3
External dimensions/height: 0.47 mm
External dimensions/packaging: SOT-883-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Prisemi | 功能相似 | SOT-723 |
NPN电阻配备晶体管; R1 = 4.7千欧, R2 =开放 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
|
||
PDTC143TM
|
Nexperia | 功能相似 |
NPN电阻配备晶体管; R1 = 4.7千欧, R2 =开放 NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open
|
|||
PDTC143TM,315
|
Nexperia | 类似代替 | SOT-883 |
TRANS PREBIAS NPN 0.25W(1/4W) SOT883
|
||
PDTC143TM,315
|
NXP | 类似代替 | SOT-883-3 |
TRANS PREBIAS NPN 0.25W(1/4W) SOT883
|
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