Technical parameters/dissipated power: 150 mW
Technical parameters/breakdown voltage (collector emitter): 50 V
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 5V
Technical parameters/rated power (Max): 150 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/dissipated power (Max): 150 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-416-3
External dimensions/length: 1.8 mm
External dimensions/width: 0.9 mm
External dimensions/height: 0.8 mm
External dimensions/packaging: SOT-416-3
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMUN2233LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR MMUN2233LT1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率, SOT-23
|
||
PDTC143ZE,115
|
NXP | 类似代替 | SC-75-3 |
Trans Digital BJT NPN 50V 100mA 150mW Automotive 3Pin SC-75 T/R
|
||
PDTC143ZE,115
|
Nexperia | 类似代替 | SOT-416-3 |
Trans Digital BJT NPN 50V 100mA 150mW Automotive 3Pin SC-75 T/R
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review