Technical parameters/dissipated power: 157 W
Technical parameters/drain source voltage (Vds): 75 V
Technical parameters/Input capacitance (Ciss): 3026pF @25V(Vds)
Technical parameters/rated power (Max): 157 W
Technical parameters/dissipated power (Max): 157W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-220-3
External dimensions/packaging: TO-220-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Rail, Tube
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PHP79NQ08LT
|
Nexperia | 功能相似 |
N沟道的TrenchMOS逻辑电平FET N-channel TrenchMOS logic level FET
|
|||
PHP79NQ08LT,127
|
Nexperia | 类似代替 | TO-220-3 |
N沟道 VDS=75V VGS=±15V ID=73A P=157W
|
||
PHP79NQ08LT,127
|
NXP | 类似代替 | TO-220-3 |
N沟道 VDS=75V VGS=±15V ID=73A P=157W
|
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