Technical parameters/frequency: 300 MHz
Technical parameters/number of pins: 3
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 260 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/minimum current amplification factor (hFE): 100 @10mA, 1V
Technical parameters/Maximum current amplification factor (hFE): 60 @0.1mA, 1V
Technical parameters/rated power (Max): 590 mW
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 590 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-883-3
External dimensions/width: 0.62 mm
External dimensions/packaging: SOT-883-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BZV55-C56,115
|
NXP | 功能相似 | SOD-80 |
Nexperia BZV55-C56,115 单路 齐纳二极管, 56V 5% 500 mW, 2引脚 MiniMELF封装
|
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