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Technical parameters/frequency: 300 MHz
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 0.25 W
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 0.2A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-236
External dimensions/length: 3 mm
External dimensions/width: 1.4 mm
External dimensions/height: 1 mm
External dimensions/packaging: TO-236
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR), Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BSR17A
|
NXP | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR BSR17A 单晶体管 双极, NPN, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE
|
||
BSR17A
|
Diotec Semiconductor | 功能相似 |
FAIRCHILD SEMICONDUCTOR BSR17A 单晶体管 双极, NPN, 40 V, 300 MHz, 350 mW, 200 mA, 100 hFE
|
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MMBT3904LT1G
|
onsemi | 功能相似 | - |
ON SEMICONDUCTOR MMBT3904LT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 300 hFE
|
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MMBT3904LT1G
|
Leshan Radio | 功能相似 | SOT-23 |
ON SEMICONDUCTOR MMBT3904LT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 225 mW, 200 mA, 300 hFE
|
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