Technical parameters/number of pins: 2
Technical parameters/forward voltage: 430mV @1A
Technical parameters/thermal resistance: 60℃/W (RθJL)
Technical parameters/forward current: 1000 mA
Technical parameters/Maximum forward surge current (Ifsm): 9 A
Technical parameters/forward voltage (Max): 430mV @1A
Technical parameters/forward current (Max): 1 A
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/operating temperature: 150℃ (Max)
Technical parameters/dissipated power (Max): 830 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: SOD-123F
External dimensions/length: 1.7 mm
External dimensions/width: 2.7 mm
External dimensions/height: 1.2 mm
External dimensions/packaging: SOD-123F
Physical parameters/operating temperature: -65℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: industry
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: lead-free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MBR120ESFT1G
|
ON Semiconductor | 功能相似 | SOD-123-2 |
ON SEMICONDUCTOR MBR120ESFT1G 肖特基整流器, 单, 20 V, 1 A, SOD-123FL, 2 引脚, 530 mV
|
||
PMEG2010AEH
|
NXP | 类似代替 | SOD-123F |
NXP PMEG2010AEH 小信号肖特基二极管, 单, 20 V, 1 A, 430 mV, 9 A, 150 °C
|
||
PMEG2010AEH
|
Nexperia | 类似代替 | SOD-123F |
NXP PMEG2010AEH 小信号肖特基二极管, 单, 20 V, 1 A, 430 mV, 9 A, 150 °C
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review