Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 0.69 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 0.96A
Technical parameters/rise time: 9.5 ns
Technical parameters/Input capacitance (Ciss): 37pF @25V(Vds)
Technical parameters/rated power (Max): 690 mW
Technical parameters/descent time: 5.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 690mW (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: TSSOP-363
External dimensions/packaging: TSSOP-363
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMG370XN
|
Philips | 功能相似 |
NXP PMG370XN 晶体管, MOSFET, N沟道, 960 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
|
|||
PMG370XN
|
NXP | 功能相似 | SOT-363 |
NXP PMG370XN 晶体管, MOSFET, N沟道, 960 mA, 30 V, 0.37 ohm, 4.5 V, 1 V
|
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