Technical parameters/dissipated power: 410 mW
Technical parameters/rise time: 7.5 ns
Technical parameters/Input capacitance (Ciss): 43pF @25V(Vds)
Technical parameters/descent time: 4.5 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 410 mW
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-363-6
External dimensions/length: 2.2 mm
External dimensions/width: 1.35 mm
External dimensions/height: 1 mm
External dimensions/packaging: SOT-363-6
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PMGD400UN,115
|
Nexperia | 类似代替 | SOT-363-6 |
NXP PMGD400UN,115 双路场效应管, MOSFET, 双N沟道, 200 mA, 30 V, 0.4 ohm, 4.5 V, 700 mV
|
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