Technical parameters/polarity: Dual N-Channel
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 125 mA
Technical parameters/rise time: 7 ns
Technical parameters/Input capacitance (Ciss): 18.5pF @5V(Vds)
Technical parameters/rated power (Max): 200 mW
Technical parameters/descent time: 7 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 6
Encapsulation parameters/Encapsulation: SOT-323-6
External dimensions/packaging: SOT-323-6
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Nexperia | 完全替代 | SOT-363 |
NXP PMGD8000LN 双路场效应管, MOSFET, 双N沟道, 125 mA, 30 V, 8 ohm, 4 V, 1.5 V
|
||
PMGD8000LN,115
|
NXP | 功能相似 | SOT-323-6 |
Trans MOSFET N-CH 30V 0.125A 6Pin TSSOP T/R
|
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