Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 50 W
Technical parameters/drain source voltage (Vds): 200 V
Technical parameters/Continuous drain current (Ids): 8.8A
Technical parameters/rise time: 11 ns
Technical parameters/Input capacitance (Ciss): 657pF @30V(Vds)
Technical parameters/rated power (Max): 50 W
Technical parameters/descent time: 7 ns
Technical parameters/dissipated power (Max): 50W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: VDFN-8
External dimensions/packaging: VDFN-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
PML260SN
|
NXP | 功能相似 | QFN |
Power Field-Effect Transistor
|
||
PML260SN,118
|
NXP | 类似代替 | VDFN-8 |
MOSFET N-CH 200V 8.8A 8HVSON
|
||
PML260SN,118
|
Nexperia | 类似代替 | VDFN-8 |
MOSFET N-CH 200V 8.8A 8HVSON
|
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